A review on metal-doped chalcogenide films and their effect on various optoelectronic properties for different applications. Issue 16 (28th March 2022)

• Record Type: Journal Article
• Authors: Priyadarshini, Priyanka; Das, Subhashree; Naik, Ramakanta
• Is Part Of: RSC advances. Volume 12:Issue 16(2022)
• Page Start: 9599
• Page End: 9620
• Publication Date: 2022-03-28
• Subjects: Chemistry -- Periodicals; 540.5
• DOI: 10.1039/d2ra00771a
• Languages: English
• ISSNs: 2046-2069

Abstract

Abstract : The schematic presentation of some metal-doped chalcogenide thin films. Abstract : Chalcogenide thin films have been investigated and explored in the last several decades to widen their use in optical, electronic, and optoelectronic device sectors. The phenomenon corresponding to different induced stimuli effects, doping foreign elements is the most productive and efficient way to improve their structural ability, optical characteristics, and electronic approaches. Based on that, metal doping has an enormous impact on the aspects and understanding of the mechanism inside the matrix. This review is mainly based on metal-doped chalcogenide thin films, their effect on various properties of the host materials, and several applications based on that. Thin films doped primarily with bismuth (Bi), antimony (Sb), silver (Ag), tin (Sn), and copper (Cu) were analyzed and discussed. Progress in understanding their structure, bonding, and properties within the matrix was also discussed. This paper also describes the importance and developments of these metal-doped thin films, their physicochemical aspects, and their applications in optoelectronic devices. Different potential applications of these metal-doped chalcogenide thin films in manufacturing technology-based optoelectronic devices, namely sensors, waveguides, switching devices, batteries, optical memories, etc., are also highlighted.