Direct electrodeposition of various metal nanocrystals on silicon oxide dielectric layer and insights into electrochemical behavior. (30th December 2021)

• Record Type: Journal Article
• Authors: Shin, Samuel J.; An, Sohee; Lee, Sul; Lee, Jae Gyeong; Chung, Taek Dong
• Is Part Of: Bulletin of the Korean Chemical Society. Volume 43:Number 2(2022)
• Page Start: 227
• Page End: 231
• Publication Date: 2021-12-30
• Subjects: electrochemistry of silicon oxide -- H atom mediated electrochemistry -- linear sweep voltammetry -- metal electrodeposition; Chemistry -- Periodicals; 540.5
• DOI: 10.1002/bkcs.12459
• Languages: English
• ISSNs: 0253-2964

Abstract

Abstract: Electrochemistry of thermally grown silicon oxide can address many interesting features and it was further embellished by the development of defective 200 nm thermal oxide grown on highly n‐doped silicon (n + ‐Si/SiO2 ). However, there are still space to uncover underlying conduction mechanism and applications, specifically for defective 200 nm n + ‐Si/SiO2 electrode. These could be addressed by direct electrodeposition, so various kinds of metal nanocrystals, Fe, Cr, Ir, Ru, Co, Pd, Cu, Ni, and Ag, were electrodeposited on it. Their shapes were characterized by SEM and electrodeposited amounts were quantified by ICP‐MS. Furthermore, voltammetry was conducted to provide insights into the direct electrodeposition mechanism of either H atom mediated electrochemistry or electron transfer through percolation paths. This work can further provide intuition toward the development of metal‐supported catalysts. Abstract : Electrodeposition of various metal such as Fe, Cr, Ir, Ru, Co, Pd, Cu, Ni, and Ag were investigated on the defective 200 nm n + ‐Si/SiO2 electrode. Electrodeposited metal NCs were characterized by SEM and ICP‐MS. Metal electrodeposition mechanisms were verified by linear sweep voltammetry: H atom mediated electrochemistry or electron transfer through percolation paths.