1550 nm‐Band InAs/InGaAlAs Quantum Dot Distributed Feedback Lasers Grown on InP(311)B Substrate with Side‐Wall Gratings Simultaneously Fabricated with a Ridge Waveguide. Issue 4 (16th November 2021)

• Record Type: Journal Article
• Authors: Kaneko, Runa; Morita, Ryosuke; Katsuhara, Ryumi; Yabuki, Ryota; Matsumoto, Atsushi; Akahane, Koichi; Matsushima, Yuichi; Ishikawa, Hiroshi; Utaka, Katsuyuki
• Other Names: Hammar Mattias guestEditor.; Hallén Anders guestEditor.; Lourdudoss Sebastian guestEditor.
• Is Part Of: Physica status solidi. Volume 219:Issue 4(2022)
• Page Start: n/a
• Page End: n/a
• Publication Date: 2021-11-16
• Subjects: 1550 nm-band quantum dots -- distributed feedback lasers -- InAs/InGaAlAs -- single-mode oscillations; Solid state physics -- Periodicals; Solids -- Industrial applications -- Periodicals; 530.41
• DOI: 10.1002/pssa.202100453
• Languages: English
• ISSNs: 1862-6300

Abstract

Abstract : A 1550 nm‐band InAs/InGaAlAs quantum dot (QD) distributed feedback (DFB) laser is fabricated, in which the side‐wall grating is formed in a simultaneous process with the ridge waveguide, and room‐temperature continuous‐wave single‐mode oscillation is achieved. A rather low‐threshold current density of about 2.2 kA cm −2 is obtained. Side‐mode suppression ratios (SMSRs) are 28 dB just above the threshold current I th and 44 dB at I / I th = 2.0. Antireflection (AR) coating suppresses the amplified spontaneous emission (ASE) and increases the slope efficiency by a factor of 1.3. Abstract : 1550 nm‐band InAs/InGaAlAs quantum dot (QD) distributed feedback (DFB) laser grown on InP(311)B substrate is fabricated with side‐wall gratings formed in a simultaneous process with a ridge waveguide. Room‐temperature (RT) continuous‐wave (CW) single‐mode oscillation is achieved. Antireflection (AR) coating suppresses the amplified spontaneous emission (ASE) and increases the slope efficiency by a factor of 1.3.