Cite
HARVARD Citation
Chaudhuri, R. et al. (2022). In Situ Crystalline AlN Passivation for Reduced RF Dispersion in Strained‐Channel AlN/GaN/AlN High‐Electron‐Mobility Transistors. Physica status solidi. 219 (4), p. n/a. [Online].
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Chaudhuri, R. et al. (2022). In Situ Crystalline AlN Passivation for Reduced RF Dispersion in Strained‐Channel AlN/GaN/AlN High‐Electron‐Mobility Transistors. Physica status solidi. 219 (4), p. n/a. [Online].