GaAsBi: From Molecular Beam Epitaxy Growth to Devices. Issue 2 (21st February 2022)

• Record Type: Journal Article
• Authors: Richards, Robert D.; Bailey, Nicholas J.; Liu, Yuchen; Rockett, Thomas B. O.; Mohmad, Abdul R.
• Is Part Of: Physica status solidi. Volume 259:Issue 2(2022)
• Page Start: n/a
• Page End: n/a
• Publication Date: 2022-02-21
• Subjects: Solid state physics -- Periodicals; Solids -- Periodicals; Atomic structure -- Periodicals; 530.41
• DOI: 10.1002/pssb.202270004
• Languages: English
• ISSNs: 0370-1972

Abstract

Abstract : On the background of a molecular beam epitaxy (MBE) machine viewport, a simplified representation of the Bi surface hopping mechanism is depicted for a GaAs surface exposed to an oscillating Bi flux. The exact behaviour of Bi on a growing surface is still the subject of some debate and oscillating fluxes appear to enhance Bi incorporation, potentially due to the increased likelihood of Bi – Ga bonds forming. These mechanisms are discussed in the Review by Robert D. Richards, Abdul R. Mohmad, and co‐workers (see article number 2100330 ).