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HARVARD Citation
Kang, H. et al. (2021). Two- and three-terminal HfO2-based multilevel resistive memories for neuromorphic analog synaptic elements. Neuromorphic computing and engineering. 1 (2), p. . [Online].
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Kang, H. et al. (2021). Two- and three-terminal HfO2-based multilevel resistive memories for neuromorphic analog synaptic elements. Neuromorphic computing and engineering. 1 (2), p. . [Online].