InGaN-based red light-emitting diodes: from traditional to micro-LEDs. (15th December 2021)

• Record Type: Journal Article
• Authors: Zhuang, Zhe; Iida, Daisuke; Ohkawa, Kazuhiro
• Is Part Of: Japanese journal of applied physics. Volume 61:Number SA(2022)
• Publication Date: 2021-12-15
• Subjects: InGaN -- red light-emitting diodes -- red micro-light-emitting diodes -- chip size -- electroluminescence; Physics -- Periodicals; 621.05
• DOI: 10.35848/1347-4065/ac1a00
• Languages: English
• ISSNs: 0021-4922

Abstract

Abstract: InGaN-based LEDs are efficient light sources in the blue–green light range and have been successfully commercialized in the last decades. Extending their spectral range to the red region causes a significant reduction in LED efficiency. This challenge hinders the integration of red, green, and blue LEDs based on III-nitride materials, especially for full-color micro-LED displays. We review our recent progress on InGaN-based red LEDs with different chip sizes from hundreds to tens of micrometers, including the epitaxial structures, device fabrication, and optical performance (peak wavelength, full-width at half-maximum, light output power, efficiency, temperature stability, and color coordinates).