(Invited) Towards Tm2+ in Sialon Thin Films Grown by Sputtering Using the Gradient Deposition. (24th April 2020)

• Record Type: Journal Article
• Authors: Bosco, Giacomo; van der Kolk, Erik
• Is Part Of: ECS transactions. Volume 97:Number 2(2020)
• Page Start: 17
• Page End: 26
• Publication Date: 2020-04-24
• Subjects: Electrochemistry -- Periodicals; Electrochemistry; Periodicals; Electronic journals; Electronic journal; 541.37
• DOI: 10.1149/09702.0017ecst
• Languages: English
• ISSNs: 1938-5862

Abstract

Abstract : The valence stability parameter (EFf ), defined as the difference between the charge transfer energy to the host intrinsic Fermi energy, was used as criterion to analyze the capability of different host materials within the SiAlON class to stabilize divalent thulium. Available data on charge transfer energies and optical bandgap values are reviewed for Si3 N4, SiO2, AlN, and Al2 O3 . In addition, new data on thin films, collected by our gradient sputter deposition and characterization method on silicon and aluminum nitrides (Si0.75x Al1-x N), are reported. These data are sufficient to show that, at least in the nitride subsection of the SiAlON class, divalent thulium is not expected to be stable due to the presence of high EFf values. The use of sub-stoichiometric silicon nitride and oxide is also briefly considered.