Effect of Electron Injection on Minority Carrier Transport in 10 MeV Proton Irradiated β-Ga2O3 Schottky Rectifiers. (13th May 2020)

• Record Type: Journal Article
• Authors: Modak, Sushrut; Chernyak, Leonid; Khodorov, Sergey; Lubomirsky, Igor; Ruzin, Arie; Xian, Minghan; Ren, Fan; Pearton, Stephen J.
• Is Part Of: ECS journal of solid state science and technology. Volume 9:Number 4(2020)
• Publication Date: 2020-05-13
• Subjects: Ga2O3, gallium oxide -- Semiconductors -- Electron Devices; Solid state chemistry -- Periodicals; Electronics -- Materials -- Periodicals; Electrochemistry -- Periodicals; 541.0421
• DOI: 10.1149/2162-8777/ab902b
• Languages: English
• ISSNs: 2162-8777

Abstract

Abstract : We report the effect of extended duration electron beam exposure on the minority carrier transport properties of 10 MeV proton irradiated (fluence ∼10 14 cm −2 ) Si-doped β -Ga2 O3 Schottky rectifiers. The diffusion length ( L ) of minority carriers is found to decrease with temperature from 330 nm at 21 °C to 289 nm at 120 °C, with an activation energy of ∼26 meV. This energy corresponds to the presence of shallow Si trap-levels. Extended duration electron beam exposure enhances L from 330 nm to 726 nm at room temperature. The rate of increase for L is lower with increased temperature, with an activation energy of 43 meV. Finally, a brief comparison of the effect of electron injection on proton irradiated, alpha-particle irradiated and a reference Si-doped β -Ga2 O3 Schottky rectifiers is presented.