Cite
HARVARD Citation
Vohra, A. et al. (2020). Source/Drain Materials for Ge nMOS Devices: Phosphorus Activation in Epitaxial Si, Ge, Ge1−xSnx and SiyGe1−x−ySnx. ECS journal of solid state science and technology. p. . [Online].
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Vohra, A. et al. (2020). Source/Drain Materials for Ge nMOS Devices: Phosphorus Activation in Epitaxial Si, Ge, Ge1−xSnx and SiyGe1−x−ySnx. ECS journal of solid state science and technology. p. . [Online].