Review—Silicon Nitride and Silicon Nitride-Rich Thin Film Technologies: State-of-the-Art Processing Technologies, Properties, and Applications. (7th August 2020)

• Record Type: Journal Article
• Authors: Kaloyeros, Alain E.; Pan, Youlin; Goff, Jonathan; Arkles, Barry
• Is Part Of: ECS journal of solid state science and technology. Volume 9:Number 6(2020)
• Publication Date: 2020-08-07
• Subjects: silicon nitride -- Thin film growth -- Atomic layer deposition -- Chemical Vapor Deposition -- Metal Organic Chemical Vapor deposition -- Dielectrics -- PECVD; Solid state chemistry -- Periodicals; Electronics -- Materials -- Periodicals; Electrochemistry -- Periodicals; 541.0421
• DOI: 10.1149/2162-8777/aba447
• Languages: English
• ISSNs: 2162-8777

Abstract

Abstract : Accelerating interest in silicon nitride thin film material system continues in both academic and industrial communities due to its highly desirable physical, chemical, and electrical properties and the potential to enable new device technologies. As considered here, the silicon nitride material system encompasses both non-hydrogenated (SiNx ) and hydrogenated (SiNx :H) silicon nitride, as well as silicon nitride-rich films, defined as SiNx with C inclusion, in both non-hydrogenated (SiNx (C)) and hydrogenated (SiNx :H(C)) forms. Due to the extremely high level of interest in these materials, this article is intended as a follow-up to the authors' earlier publication [A. E. Kaloyeros, F. A. Jové, J. Goff, B. Arkles, Silicon nitride and silicon nitride-rich thin film technologies: trends in deposition techniques and related applications, ECS J. Solid State Sci. Technol., 6, 691 (2017)] that summarized silicon nitride research and development (R&D) trends through the end of 2016. In this survey, emphasis is placed on cutting-edge achievements and innovations from 2017 through 2019 in Si and N source chemistries, vapor phase growth processes, film properties, and emerging applications, particularly in heterodevice areas including sensors, biointerfaces and photonics.