Cite
HARVARD Citation
Huang, X. et al. (2020). 3.4 kV Breakdown Voltage Ga2O3 Trench Schottky Diode with Optimized Trench Corner Radius. ECS journal of solid state science and technology. p. . [Online].
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Huang, X. et al. (2020). 3.4 kV Breakdown Voltage Ga2O3 Trench Schottky Diode with Optimized Trench Corner Radius. ECS journal of solid state science and technology. p. . [Online].