Comparison of Nonlinear Grading Approaches for ZnSSe/GaAs (001) Heterostructrures. (24th April 2020)

• Record Type: Journal Article
• Authors: Ayers, John E; Kujofsa, Tedi
• Is Part Of: ECS transactions. Volume 97:Number 4(2020)
• Page Start: 89
• Page End: 97
• Publication Date: 2020-04-24
• Subjects: Electrochemistry -- Periodicals; Electrochemistry; Periodicals; Electronic journals; Electronic journal; 541.37
• DOI: 10.1149/09704.0089ecst
• Languages: English
• ISSNs: 1938-5862

Abstract

Abstract : Compositional grading is commonly used to accommodate the lattice mismatch in metamorphic semiconductor device structures. Although linearly-graded or linear step-graded approaches are commonly used, there are experimental and theoretical grounds for the expectation that nonlinearly-graded buffer layers could offer advantages in the control of dislocations or strain. In this work we have conducted a detailed modeling study of nonlinearly-graded buffer layers in ZnSSe/GaAs (001) heterostructures to better understand the dislocation dynamics and defect behavior in such nonlinear buffers, and we make comparisons to the well-known case of linear grading.