On the Correlation Between Static and Low-Frequency Noise Parameters of Vertical Nanowire nMOSFETs. (24th April 2020)

• Record Type: Journal Article
• Authors: Simoen, Eddy; Chasin, Adrian; Matagne, Philippe; Rosseel, Erik; Hikavyy, Andriy Yakovitch; Loo, Roger; Favia, Paola; Bender, Hugo; Vancoille, Eric; Veloso, Anabela
• Is Part Of: ECS transactions. Volume 97:Number 5(2020)
• Page Start: 59
• Page End: 64
• Publication Date: 2020-04-24
• Subjects: Electrochemistry -- Periodicals; Electrochemistry; Periodicals; Electronic journals; Electronic journal; 541.37
• DOI: 10.1149/09705.0059ecst
• Languages: English
• ISSNs: 1938-5862

Abstract

Abstract : The low-frequency noise behavior of gate-all-around vertical nanowire silicon nMOSFETs is described and discussed with respect to the static device parameters, like the threshold voltage and the maximum transconductance. The spectra are dominated by 1/f noise at low frequencies, followed by white noise. The 1/f noise power spectral density at 10 Hz is correlated with the maximum transconductance and the threshold voltage. This is interpreted in terms of the diameter of the nanowires.