Communication—Enhancement of Boron Back-Surface-Field and Suppression of Auger Recombination to Improve Ultralow-Reflectance Si Solar Cells. (1st May 2020)

• Record Type: Journal Article
• Authors: Kunieda, Shogo; Imamura, Kentaro; Kobayashi, Hikaru
• Is Part Of: ECS journal of solid state science and technology. Volume 9:Number 4(2020)
• Publication Date: 2020-05-01
• Subjects: Energy Conversion - Photovoltaics -- Microelectronics - Semiconductor Processing -- Electron Devices - Silicon -- Etching - Chemical -- Nanoscale materials -- Spin coating; Solid state chemistry -- Periodicals; Electronics -- Materials -- Periodicals; Electrochemistry -- Periodicals; 541.0421
• DOI: 10.1149/2162-8777/ab8b6e
• Languages: English
• ISSNs: 2162-8777

Abstract

Abstract : A high conversion efficiency of 20.2% is achieved for simple structured-Si solar cells without a conventional anti-reflection layer. The ultralow-reflectance less than ∼3% is achieved by formation of a nanocrystalline Si (nc-Si) layer using the surface structure chemical transfer (SSCT) method which takes only 15 s. The nc-Si layer is passivated by phosphosilicate glass, while the rear Si surface is passivated by boron back-surface-field (B-BSF). By optimizing diffusion conditions, a high short-circuit current density of 41.8 mAcm −2 and improvement of an open-circuit voltage are achieved owing to enhancement of B-BSF and suppression of Auger recombination in the phosphorus-doped nc-Si layer.