A Forward Current-Voltage-Temperature Method for Extraction of Intrinsic Schottky Barrier Height. (21st July 2020)

• Record Type: Journal Article
• Authors: Changshi, Liu
• Is Part Of: ECS journal of solid state science and technology. Volume 9:Number 6(2020)
• Publication Date: 2020-07-21
• Subjects: Electron Devices -- Electronic interfaces -- Microelectrnics - Semiconductor Materials -- Theory and Modelling; Solid state chemistry -- Periodicals; Electronics -- Materials -- Periodicals; Electrochemistry -- Periodicals; 541.0421
• DOI: 10.1149/2162-8777/aba4f3
• Languages: English
• ISSNs: 2162-8777

Abstract

Abstract : Schottky Barrier Height, SBH, controls the current flow into electronic and photoelectronic devices based on hetero-junctions. The SBH predicted via the conventional method is sensitive to temperature by forward current-voltage-temperature, I-V-T. This poses some problems in applications of a hetero-junction device. Therefore, one looks for a technique to extract intrinsic SBH of each new hetero-junction. This paper established a simple model for determination of the forward I-V-T characteristics, a real thermionic current, Itc, and SBH. This model was introduced by considering quantum statistics and phenomenological. The proposed methodology can couple two independent plots of each hetero-junction current and helps predict the value of current at any measurement condition. The proposed model was successfully validated via over twenty experimental I–V curves. Therefore, applying the least-squares nonlinear fitting to extract the parameters of the proposed model on Itc -T yields the values of the intrinsic SBH. The results of applications on four hetero-junctions prove that the proposed method is credible in this paper.