Fabrication of Heavy Metal Ion FET Based Sensor for Detecting Arsenite. (24th April 2020)

• Record Type: Journal Article
• Authors: Tatavarthi, Sai Sudheer; Wang, Yu-Lin
• Is Part Of: ECS transactions. Volume 97:Number 6(2020)
• Page Start: 3
• Page End: 7
• Publication Date: 2020-04-24
• Subjects: Electrochemistry -- Periodicals; Electrochemistry; Periodicals; Electronic journals; Electronic journal; 541.37
• DOI: 10.1149/09706.0003ecst
• Languages: English
• ISSNs: 1938-5862

Abstract

Abstract : Arsenic is one of the toxic chemical among heavy metals. It is mostly present in ground water at higher levels which leads to cancer and heart diseases. Arsenic occurs in two oxidation states, Arsenite (As (III)) and Arsenate (As (V)). As (III) is more toxic than As (V). The detection of arsenic ion in drinking water or in any liquid form of food can be done with several laboratory equipment's such as ICP-MS. In this research, we developed a methodology by fabricating an extended gate chip FET sensor for detecting As (III) ions. Sodium Arsenite (NaAsO2 ) is the inorganic compound which is used for detection of As (III). The concentration range is from 10^-10 M to 10^-4 M. This sensor is easy to fabricate, smaller in size, high sensitivity and takes less time for detecting Arsenite comparable to several laboratory equipment's. This FET based ion sensor has same detection limit comparable to ICP-MS and this sensor shows higher sensitivity than the Nernstian slope.