Impact of Gate Dielectric Material on Basic Parameters of MO(I)SHEMT Devices. (24th April 2020)

• Record Type: Journal Article
• Authors: Agopian, Paula Ghedini Der; Carmo, Genilson Julião do; Martino, Joao Antonio; Simoen, Eddy; Collaert, Nadine
• Is Part Of: ECS transactions. Volume 97:Number 5(2020)
• Page Start: 53
• Page End: 58
• Publication Date: 2020-04-24
• Subjects: Electrochemistry -- Periodicals; Electrochemistry; Periodicals; Electronic journals; Electronic journal; 541.37
• DOI: 10.1149/09705.0053ecst
• Languages: English
• ISSNs: 1938-5862

Abstract

Abstract : In this work, the behavior of MISHEMT devices with different gate materials is analyzed. Two-gate insulator materials (Al2 O3 and SiN) were analyzed through the transfer characteristic, threshold voltage, hysteresis and transconductance. Although devices with SiN insulator present smaller hysteresis, better DIBL and it is nearest to a normally off devices, the leakage current showed to be much higher than for the Al2 O3 counterpart. Besides the double conduction that occurs in SiN devices results in an anomalous behavior of transconductance and consequently an unexpected behavior of threshold voltage with temperature.