Stable Low Electron Concentration β-Ga2O3 Films Grown by Metal-Organic Chemical Vapor Deposition. (19th June 2020)

• Record Type: Journal Article
• Authors: Jiao, Teng; Li, Zeming; Li, Wancheng; Dong, Xin; Zhang, Yuantao; Zhang, Baolin; Du, Guotong
• Is Part Of: ECS journal of solid state science and technology. Volume 9:Number 5(2020)
• Publication Date: 2020-06-19
• Subjects: MOCVD -- Ga2O3, gallium oxide -- Films; Solid state chemistry -- Periodicals; Electronics -- Materials -- Periodicals; Electrochemistry -- Periodicals; 541.0421
• DOI: 10.1149/2162-8777/ab96ab
• Languages: English
• ISSNs: 2162-8777

Abstract

Abstract : The Si-doped β -Ga2 O3 films were grown on c-plane sapphire substrates by metal-organic chemical vapor deposition (MOCVD). Then the films were annealed in oxygen to reduce the intrinsic defects effectively. The effect of the Si doping concentration and the oxygen annealing time on the properties of β -Ga2 O3 films was studied in detail. It was found that the crystal structure, surface morphology and electrical characteristics of the films can be changed regularly by adjusting the Si content and annealing time. β -Ga2 O3 films with high quality and stable electron concentration can be obtained by this method.