Communication—Wide Bandgap Tin Oxide Thin Film Transistor by Doping Rare Earth Element Europium. (13th July 2020)

• Record Type: Journal Article
• Authors: Yang, Jianwen; Hu, Gengtao; Cao, Duo; Liu, Feng
• Is Part Of: ECS journal of solid state science and technology. Volume 9:Number 6(2020)
• Publication Date: 2020-07-13
• Subjects: thin film transistors -- tin oxide -- sol-gel -- Europium; Solid state chemistry -- Periodicals; Electronics -- Materials -- Periodicals; Electrochemistry -- Periodicals; 541.0421
• DOI: 10.1149/2162-8777/aba330
• Languages: English
• ISSNs: 2162-8777

Abstract

Abstract : –Amorphous europium-doped tin oxide ( a- SnEuO) thin film transistors (TFTs) with a wide bandgap of 3.87 eV were prepared by sol-gel method. The results indicate that as Eu content increases, the off-state current of the a- SnEuO TFTs decreases, the threshold voltage (Vth ) shifts in the positive direction and the subthreshold swing ( S.S. ) is also improved. When Eu content is 30 at%, the mobility of a- SnEuO TFTs is 4.5 cm 2 V −1 s −1, with an S.S. of 0.8 V dec −1 . and a switching ratio of 9.5 × 10 6 . Our study indicates Eu-doped SnO2 TFT is expected to be the next generation of display technology.