Correlation of Pulsed Gas Flow on Si-doped α-Ga2O3 Epilayer Grown by Halide Vapor Phase Epitaxy. (8th June 2020)

• Record Type: Journal Article
• Authors: Son, Hoki; Choi, Ye-ji; Park, Ji-Hyeon; Ryu, Bongki; Jeon, Dae-Woo
• Is Part Of: ECS journal of solid state science and technology. Volume 9:Number 5(2020)
• Publication Date: 2020-06-08
• Subjects: α-Ga2O3 -- HVPE -- ultra-wide band gap -- n-type; Solid state chemistry -- Periodicals; Electronics -- Materials -- Periodicals; Electrochemistry -- Periodicals; 541.0421
• DOI: 10.1149/2162-8777/ab96ac
• Languages: English
• ISSNs: 2162-8777

Abstract

Abstract : Gallium oxide (Ga2 O3 ) is the one of the ultra-wide-band-gap semiconductor material. The Ga2 O3 semiconductor has been studied for use in highly energy efficient devices. Among its phases, the β -phase of Ga2 O3 has mainly been researched until recently. However, the α -phase, which has superior properties (e.g., wider band-gap and higher symmetry) has been discussed in the electronic-materials field of late. There are problems that need to be overcome in order for the α -phase to be a suitable electronic material; one of them is the production of high-quality thin films. This article reports the fabrication of a high-quality Si-doped α -Ga2 O3 epilayer on α -Al2 O3 substrate by halide vapor-phase epitaxy with the controlled pulse flow of each precursor. The α -Ga2 O3 epilayer grown with a controlled pulse flow of O2 has a lower full width at half maximum (FWHM; 1306 arcsec) for the 10–14 diffraction compared to the FWHM (2011 arcsec) of the as-grown sample. The pulse-flow mode of introducing Ga and O2 strongly influences the crystal quality of α -Ga2 O3 . In the O2 -control mode, we demonstrated Si-doped α -Ga2 O3 epilayers with higher electron mobility up to 51.57 cm 2 V −1 s −1 and wider carrier concentrations range of 10 17 ∼ 10 19 cm −3 by improving the crystal quality.