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HARVARD Citation
Shi, J. et al. (2020). Preparation of High Al Content (AlxGa1−x)2O3 Films by Low-Pressure Reactive Vapor Deposition on Sapphire Substrates. ECS journal of solid state science and technology. p. . [Online].
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Shi, J. et al. (2020). Preparation of High Al Content (AlxGa1−x)2O3 Films by Low-Pressure Reactive Vapor Deposition on Sapphire Substrates. ECS journal of solid state science and technology. p. . [Online].