Effect of Cu doping on microstructure and thermoelectric properties of Bi2Te2.85Se0.15 bulk materials. (15th March 2018)

• Record Type: Journal Article
• Authors: Wang, Zhi-Lei; Onda, Tetsuhiko; Chen, Zhong-Chun
• Is Part Of: Scripta materialia. Number 146(2018)
• Page Start: 119
• Page End: 122
• Publication Date: 2018-03-15
• Subjects: Bismuth telluride -- Cu doping -- Microstructure -- Thermoelectric properties -- Spark plasma sintering; Materials -- Periodicals; Metallurgy -- Periodicals; Metalen; Legeringen; Materiaalkunde; Metals, metalworking and machinery industries; Metals; Electronic journals; 620.11
• DOI: 10.1016/j.scriptamat.2017.11.028
• Languages: English
• ISSNs: 1359-6462

Abstract

Abstract: Cu was incorporated into Bi2 Te2.85 Se0.15 compound as a dopant, and the microstructure and thermoelectric properties of sintered Cux Bi2 Te2.85 Se0.15 samples have been investigated. The Cu atoms intercalated into interstitial sites along the c -axis, which caused an increase in lattice constant c . The accommodation of Cu in Bi2 Te2.85 Se0.15 reached saturation at x = 0.05 and the excessive Cu formed a copper telluride compound. The interstitial Cu resulted in decreases in carrier concentration and phonon thermal conductivity as well as an increase in carrier mobility. A maximum ZT value was obtained at x = 0.05, which was enhanced for about 4 times compared to Cu-free sample. Graphical abstract: Image 1