Fully Printed Inverters using Metal‐Oxide Semiconductor and Graphene Passives on Flexible Substrates. Issue 9 (7th September 2020)

• Record Type: Journal Article
• Authors: Singaraju, Surya Abhishek; Marques, Gabriel Cadilha; Gruber, Patric; Kruk, Robert; Hahn, Horst; Breitung, Ben; Aghassi-Hagmann, Jasmin
• Is Part Of: Physica status solidi. Volume 14:Issue 9(2020)
• Page Start: n/a
• Page End: n/a
• Publication Date: 2020-09-07
• Subjects: Solid state physics -- Periodicals; 530.4105
• DOI: 10.1002/pssr.202070036
• Languages: English
• ISSNs: 1862-6254

Abstract

Abstract : The cover image (referring to article number 2000252 by Surya Abhishek Singaraju, Jasmin Aghassi‐Hagmann, and co‐workers) depicts fully printed inverters in a transistor‐resistor logic on flexible polyimide substrates. Polycrystalline indium oxide is printed as the active semiconducting material whereas graphene is printed as the passive structures. The authors observed the devices to be highly stable in electrical performance while withstanding tensile strain of more than 2%. A polymer electrolyte is used as gate insulator and PEDOT:PSS as top gate. The devices are even subjected to stretching in order to substantiate the surface corrugation of the printed films.