High Efficiency Electron Transfer Layer based on Ag-Al Co-Doped ZnS in Organic Lighting Emission Devices. (10th December 2014)

• Record Type: Journal Article
• Authors: He, Xiaoxiao; Wang, Wenjun; Li, Shuhong; Wang, Qingru; Zheng, Wanquan; Shi, Qiang; Liu, Yunlong
• Is Part Of: ECS Solid State Letters. Volume 4:Number 2(2015)
• Page Start: R10
• Page End: R12
• Publication Date: 2014-12-10
• DOI: 10.1149/2.0021502ssl
• Languages: English
• ISSNs: 2162-8750

Abstract

Abstract : Electron transmission improvement in organic light-emitting devices with Ag-Al co-doped ZnS has been demonstrated. The electroluminescence (EL) of device with co-doped ZnS electron transfer layer (ETL) is more than that of devices without ETL and the co-doped ZnS ETL device performs higher EL compared to pure ZnS ETL device. The using of co-doped ZnS can reduce the thickness of ETL from 40 nm to 8 nm and performs comparable efficiency and higher EL. According to the PL spectra studies and current density-voltage characters, the improved electron transmission is attributed to the introduction of impurity energy level and the increased concentration of electron.