Cite
HARVARD Citation
Ki, B. et al. (2015). Controlled Tensile Strain of Ge Films Hetero-Epitaxially Grown on Si Substrates Using E-Beam Evaporator. ECS Solid State Letters. pp. P12-P14. [Online].
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Ki, B. et al. (2015). Controlled Tensile Strain of Ge Films Hetero-Epitaxially Grown on Si Substrates Using E-Beam Evaporator. ECS Solid State Letters. pp. P12-P14. [Online].