Improved Retention Characteristics of Pd-Nanocrystal-Based Nonvolatile Memories by a Simple Timing Technique. (30th September 2015)

• Record Type: Journal Article
• Authors: Kang, Tsung-Kuei; Chen, Yun-Feng; Lin, Cheng-Li; Wang, Fang-Hsing; Liu, Han-Wen; Chien, Feng-Tso; Shi, Jen-Bin
• Is Part Of: ECS Solid State Letters. Volume 4:Number 12(2015)
• Page Start: N20
• Page End: N22
• Publication Date: 2015-09-30
• Subjects: Al/Hf ratio -- HfxAlyOz -- Pd nanocrystal -- Retention characteristic -- Tunneling layer
• DOI: 10.1149/2.0071512ssl
• Languages: English
• ISSNs: 2162-8750

Abstract

Abstract : By controlling the different initial time of Hf and Al precursor supply, the proposed Hfx Aly Oz tunneling layer with different Al/Hf ratios from 0.21 (top) to 0.06 (bottom) can be fabricated. Regarding Al/SiO2 /Pd nanocrystals/proposed Hfx Aly Oz /Si, the proposed Hfx Aly Oz film can prevent stress from Pd nanocrystals and achieve a higher electron current during programming. Regarding the retention characteristics, the final memory windows of 2.5/2.05 V at 25/90°C can be obtained, respectively. Programmed and erased with ±10 V/100 ms, the device shows a memory window of 2.4 V after 10 4 cycles for a 25°C test.