Etching Three-Dimensional Pattern on Sapphire Substrate by Dynamic Self-Masking Alunogen Compound. (15th April 2015)

• Record Type: Journal Article
• Authors: Huang, S. W.; Wu, Y. J.; Lin, H. Y.; Li, S. F.; Chen, Y. J.; Liu, C. Y.
• Is Part Of: ECS Solid State Letters. Volume 4:Number 6(2015)
• Page Start: R35
• Page End: R38
• Publication Date: 2015-04-15
• Subjects: crystal growth -- etching -- surface structure
• DOI: 10.1149/2.0051506ssl
• Languages: English
• ISSNs: 2162-8750

Abstract

Abstract : Maskless H2 SO4 wet-etching on sapphire substrates creates three-dimensional pyramidal pattern on sapphire surface. Alunogen self-forming mask grows in H2 SO4 etching generating a dynamic self-masking action, which fabricates 3-dimensional pyramidal pattern on the etched sapphire wafers. The slope and size of the pyramids are controlled by rate ratio (k) between alunogen growth rate and c-plane etching rate. Constant k results in flat facet side-planes of sapphire pyramids and varying k in etching produce curved side-planes of the sapphire pyramid.