Cite
HARVARD Citation
Liang, J. et al. (2015). 4H-SiC/Si Heterojunction Bipolar Transistors Fabricated by Surface Activated Bonding. ECS Solid State Letters. pp. Q55-Q57. [Online].
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Liang, J. et al. (2015). 4H-SiC/Si Heterojunction Bipolar Transistors Fabricated by Surface Activated Bonding. ECS Solid State Letters. pp. Q55-Q57. [Online].