TCAD analysis of tunnel field effect transistor using Ge material for low power application. (2022)

• Record Type: Journal Article
• Authors: Chander, Sweta; Chaudhary, Rekha; Sinha, Sanjeet Kumar
• Is Part Of: Materials today. Volume 50:Part 5(2022)
• Page Start: 2398
• Page End: 2403
• Publication Date: 2022
• Subjects: TFET -- Low power -- Pocket engineering -- Tunneling; Materials science -- Congresses -- Periodicals; 620.1
• DOI: 10.1016/j.matpr.2021.10.256
• Languages: English
• ISSNs: 2214-7853

Abstract

Abstract: Low power is important parameter for any semiconductor devices. In transistors the current flow between source to drain through channel region is dependent upon the materials of source, drain and channel. This paper presents a detailed study of the role of Technology Computer-Aided Design (TCAD) simulations of tunnel-field-effect-transistor (TFET) for low power applications with Germanium (Ge) material. Ge has band gap 0.66 V and the most suitable candidate to improve TFET performance. The need and importance of TCAD tool in semiconductor technology development is explained in details in this manuscript. It also elaborates the TCAD techniques for designing a device, parameter extraction and different models that are used to design different TFET structure. TCAD based digital logic design, design for manufacturing, memory designing and reliability study have been also discussed in this paper.