Prediction of intermediate band in Ti/V doped γ-In2S3. Issue 3 (6th January 2022)
- Record Type:
- Journal Article
- Title:
- Prediction of intermediate band in Ti/V doped γ-In2S3. Issue 3 (6th January 2022)
- Main Title:
- Prediction of intermediate band in Ti/V doped γ-In2S3
- Authors:
- Jebasty, R. Mariyal
Sjåstad, Anja Olafsen
Vidya, R. - Abstract:
- Abstract : We find the band structure of In1.5 V0.5 S3 with HSE functional, where the vanadium atom introduces an intermediate band inside the forbidden gap in the γ-phase of In2 S3 . Abstract : Materials with an intermediate energy band (IB) introduced in the forbidden gap are viable alternatives to tandem configurations of solar cells for increasing the photon-conversion efficiency. One of the aspiring designs proposed for the intermediate band concept is hyperdoped (Ti, V):In2 S3 . Being very important in copper indium gallium sulfide (CIGS) solar cells, indium thiospinel (In2 S3 ) is known for its three different temperature as well as pressure, polymorphs. The most stable β-In2 S3 was experimentally shown to have an isolated intermediate band (IB) and exhibits sub-band gap absorption due to the completely filled IB after V-doping. Though experimental observation holds a positive signature, recent DFT studies did not show a metallic intermediate band for the V dopant in the 3+ charge state. In order to clarify this, we have taken incentive from experimental XRD analysis that V-doped β-In2 S3 shows peaks from disordered In vacancies (either α or γ), in addition to the ordered In vacancies expected. Hence, we have carried out state-of-the-art DFT based computations on pure and Ti, V-doped In2 S3 in the γ-phase which has not been studied yet. We considered the Ti and V dopants in various charge states. Our theoretical study including hybrid functional, does in fact find theAbstract : We find the band structure of In1.5 V0.5 S3 with HSE functional, where the vanadium atom introduces an intermediate band inside the forbidden gap in the γ-phase of In2 S3 . Abstract : Materials with an intermediate energy band (IB) introduced in the forbidden gap are viable alternatives to tandem configurations of solar cells for increasing the photon-conversion efficiency. One of the aspiring designs proposed for the intermediate band concept is hyperdoped (Ti, V):In2 S3 . Being very important in copper indium gallium sulfide (CIGS) solar cells, indium thiospinel (In2 S3 ) is known for its three different temperature as well as pressure, polymorphs. The most stable β-In2 S3 was experimentally shown to have an isolated intermediate band (IB) and exhibits sub-band gap absorption due to the completely filled IB after V-doping. Though experimental observation holds a positive signature, recent DFT studies did not show a metallic intermediate band for the V dopant in the 3+ charge state. In order to clarify this, we have taken incentive from experimental XRD analysis that V-doped β-In2 S3 shows peaks from disordered In vacancies (either α or γ), in addition to the ordered In vacancies expected. Hence, we have carried out state-of-the-art DFT based computations on pure and Ti, V-doped In2 S3 in the γ-phase which has not been studied yet. We considered the Ti and V dopants in various charge states. Our theoretical study including hybrid functional, does in fact find the IB in V-doped γ-In2 S3 . However, at equilibrium the IB lies in between the Fermi level ( E F ) and conduction band minimum (CBM). … (more)
- Is Part Of:
- RSC advances. Volume 12:Issue 3(2022)
- Journal:
- RSC advances
- Issue:
- Volume 12:Issue 3(2022)
- Issue Display:
- Volume 12, Issue 3 (2022)
- Year:
- 2022
- Volume:
- 12
- Issue:
- 3
- Issue Sort Value:
- 2022-0012-0003-0000
- Page Start:
- 1331
- Page End:
- 1340
- Publication Date:
- 2022-01-06
- Subjects:
- Chemistry -- Periodicals
540.5 - Journal URLs:
- http://pubs.rsc.org/en/Journals/JournalIssues/RA ↗
http://www.rsc.org/ ↗ - DOI:
- 10.1039/d0ra08132a ↗
- Languages:
- English
- ISSNs:
- 2046-2069
- Deposit Type:
- Legaldeposit
- View Content:
- Available online (eLD content is only available in our Reading Rooms) ↗
- Physical Locations:
- British Library DSC - 8036.750300
British Library DSC - BLDSS-3PM
British Library STI - ELD Digital store - Ingest File:
- 20858.xml