Capturing the Effects of Free Surfaces on Threading Dislocation Density Reduction. (8th September 2020)

• Record Type: Journal Article
• Authors: Bioud, Youcef Ataellah; Boucherif, Abderraouf; Patriarche, Gilles; Drouin, Dominique; Arès, Richard
• Is Part Of: ECS transactions. Volume 98:Number 5(2020)
• Page Start: 527
• Page End: 532
• Publication Date: 2020-09-08
• Subjects: Electrochemistry -- Periodicals; Electrochemistry; Periodicals; Electronic journals; Electronic journal; 541.37
• DOI: 10.1149/09805.0527ecst
• Languages: English
• ISSNs: 1938-5862

Abstract

Abstract : The big concern with using silicon as a substrate for making Ge and III-V devices is the dislocation density in the epilayers. Dislocations degrade device performance by trapping the photo-generated carriers, dragging down efficiency. In this manuscript, a Ge/Si substrate is treated with a post epitaxial process to create a region with a high density of nanovoids within the Ge/Si structure, which acts as a free surface that attracts dislocations, facilitating the subsequent annihilation of their threading arms. Nanovoids are formed in the Ge layer by electrochemical porosification, followed by thermal annealing, creating a new configuration referred to as nanovoid-based Ge/Si virtual substrate (NVS).