(Invited) Effect of the Plasma Etching on InAsP/InP Quantum Well Structures Measured through Low Temperature Micro-Photoluminescence and Cathodoluminescence. (24th April 2020)

• Record Type: Journal Article
• Authors: Landesman, Jean-Pierre; Isik Goktas, Nebile; LaPierre, Ray R; Ghanad-Tavakoli, Shahram; Pargon, Erwine; Petit-Etienne, Camille; Levallois, Christophe; Jiménez, Juan; Dadgostar, Shabnam
• Is Part Of: ECS transactions. Volume 97:Number 2(2020)
• Page Start: 43
• Page End: 55
• Publication Date: 2020-04-24
• Subjects: Electrochemistry -- Periodicals; Electrochemistry; Periodicals; Electronic journals; Electronic journal; 541.37
• DOI: 10.1149/09702.0043ecst
• Languages: English
• ISSNs: 1938-5862

Abstract

Abstract : Photoluminescence and cathodoluminescence spectral imaging were performed across rectangular stripes etched in samples with InAsx P1-x quantum wells of constant thickness and variable composition grown on InP. In particular, the effects of different etching chemistries (CH4 /H2 /Ar and Cl2 /CH4 /Ar) were investigated. The results discussed deal with modifications of the luminescence line shapes (which differ with etching process) and with the intensity variation of the emissions associated with the quantum wells across the stripes. The possible origins of these effects are investigated in terms of carrier recombination on the vertical sidewalls of the stripes and lateral diffusion of species from the plasma during etching. Cathodoluminescence measurements on samples under DC-bias also show the quantum confined Stark effect which is correlated to the material modifications induced by the etching.