(Invited) Dielectric Science on Today's Devices. (24th April 2020)

• Record Type: Journal Article
• Authors: Misra, Durgamadhab
• Is Part Of: ECS transactions. Volume 97:Number 5(2020)
• Page Start: 135
• Page End: 142
• Publication Date: 2020-04-24
• Subjects: Electrochemistry -- Periodicals; Electrochemistry; Periodicals; Electronic journals; Electronic journal; 541.37
• DOI: 10.1149/09705.0135ecst
• Languages: English
• ISSNs: 1938-5862

Abstract

Abstract : The trends of various high-k gate dielectrics deposited on silicon or germanium is reviewed for logic and memory devices. Initially, Zr and low percentage of Al incorporation into HfO2 -based high-k dielectrics gate stack on silicon through different process conditions were outlined. Subsequently, high-k gate stack deposition process on Ge was evaluated to form a stable Ge/high-k interface. We have also looked at the high-k gate dielectric stacks in a MIM capacitor for possible applications in memory and AI hardware.