Improvement in NO2 Gas Sensing Performance Using Igzo Film Sensor. (24th April 2020)

• Record Type: Journal Article
• Authors: Eadi, Sunil Babu; Jeong, Jun-Kyo; Song, Hyeong-Sub; Lee, Ga-Won; Lee, Hi-Deok
• Is Part Of: ECS transactions. Volume 97:Number 6(2020)
• Page Start: 71
• Page End: 78
• Publication Date: 2020-04-24
• Subjects: Electrochemistry -- Periodicals; Electrochemistry; Periodicals; Electronic journals; Electronic journal; 541.37
• DOI: 10.1149/09706.0071ecst
• Languages: English
• ISSNs: 1938-5862

Abstract

Abstract : In this study, Indium-Gallium-Zinc-Oxide (IGZO) films are grown using magnetron sputtering process for the detection NO2 gas. The IGZO films with a thickness of 50 nm were deposited on interdigitated electrode substrates using polycrystalline IGZO target (In2 O3 :Ga2 O3 :ZnO = 2:2:7 mol. %) target and annealed for 1 hr in O2 atmosphere at temperature 300, 400 and 500 °C respectively. The sensor characteristics were studied from room temperature to 250 °C working temperatures. The maximum sensor response (Rair /Rgas ) of 33.6, 27.9, 11.3 and 5.53 were obtained for 100 ppm NO2 concentration at 250, 200, 150 and 100 °C operating temperature respectively for IGZO sample annealed at 300 °C. The selectivity of the sensor was examined with various gases.