Impact of Technology on CNTFET-Based Circuits Performance. (18th May 2020)

• Record Type: Journal Article
• Authors: Marani, R.; Perri, A. G.
• Is Part Of: ECS journal of solid state science and technology. Volume 9:Number 5(2020)
• Publication Date: 2020-05-18
• Subjects: Electron Devices -- Microelectronics -- Theory and Modelling; Solid state chemistry -- Periodicals; Electronics -- Materials -- Periodicals; Electrochemistry -- Periodicals; 541.0421
• DOI: 10.1149/2162-8777/ab9185
• Languages: English
• ISSNs: 2162-8777

Abstract

Abstract : In this paper we present a study of the impact of technology on the CNTFET-based circuits performance. In particular we show the layout of a NOT gate, used as block to build a chain of NOT and a ring oscillator. Then we present the time domain simulations of these circuits in order to see how the parasitic elements could limit the high-speed performances of CNTFETs.