Communication—High Fidelity All-Carbon Based Carbon Nanotube Thin Film Transistors. (5th May 2020)

• Record Type: Journal Article
• Authors: Li, Huaping; Zhou, Lili
• Is Part Of: ECS journal of solid state science and technology. Volume 9:Number 4(2020)
• Publication Date: 2020-05-05
• Subjects: all carbon-based carbon nanotube thin film transistor -- bias stress test -- capacitance-voltage measurement -- hysteresis-less -- stretching and bending tests; Solid state chemistry -- Periodicals; Electronics -- Materials -- Periodicals; Electrochemistry -- Periodicals; 541.0421
• DOI: 10.1149/2162-8777/ab8d95
• Languages: English
• ISSNs: 2162-8777

Abstract

Abstract : This work reports transfer curve characterization, capacitance-voltage measurement, bias stress test, bending and stretching tests of the high fidelity flexible and stretchable thin-film transistors constructed on unsorted single-walled carbon nanotubes drain-source-gate electrodes, sorted semiconducting single-walled carbon nanotubes thin film active layer, and nonpolar styrene−ethylene−butadiene−styrene (SEBS) hydrogenated elastomer dielectric and substrate. The air-stable, hysteresis-less, negligible threshold shift under bias stress test, stable performance during bending, and slightly current density changes under stretching strains of these all-carbon based thin-film transistors qualify for basic elements applicable in industrial flexible and stretchable electronics.