Indentation in single-crystal 6H silicon carbide: Experimental investigations and finite element analysis. (August 2018)

• Record Type: Journal Article
• Authors: Pang, Ka Ho; Tymicki, Emil; Roy, Anish
• Is Part Of: International journal of mechanical sciences. Volume 144(2018)
• Page Start: 858
• Page End: 864
• Publication Date: 2018-08
• Subjects: Mechanical engineering -- Periodicals; Génie mécanique -- Périodiques; Mechanical engineering; Maschinenbau; Mechanik; Zeitschrift; Periodicals; 621.05
• DOI: 10.1016/j.ijmecsci.2017.11.021
• Languages: English
• ISSNs: 0020-7403

Abstract

Highlights: Deformation of single crystal 6H-SiC was studied experimentally and numerically. Nanoindentation experiments were performed on the single crystal. A finite-element crystal plasticity model for 6H-SiC was developed. Abstract: Silicon carbide (SiC) is a promising material ideally suited for small-scaled devices deployed in harsh environments. SiC is brittle in bulk form, however, at small component length-scales plasticity is observed. A good understanding of deformation behaviour is, therefore, crucial for reliable small-scale component design and fabrication. Here, experimental and numerical analysis of the deformation behaviour of single-crystal 6H-SiC in nanoindentation is presented. Nanoindentation studies are carried out in two orientations of the single-crystal using a Berkovich indenter. Next, a crystal-plasticity theory was implemented in finite-element (FE) modelling framework to predict the deformation of the hexagonal single-crystal. The validity of the present FE modelling methodology was corroborated through comparison between FE simulations and experimental data in terms of indent profile and load-displacement curves. Our results showed that classical crystal plasticity theory can be reliably applied in predicting plastic deformation of ceramic at small scales. Graphical abstract: Image, graphical abstract