Chemical bath deposition of AgBiS2 films for visible and X-ray detection. (March 2022)

• Record Type: Journal Article
• Authors: Yao, Fang; Jiang, Li; Qi, Yiming; Li, Ruiming; Li, Yanyan; Xu, Yalun; Liu, Huidong; Lin, Qianqian
• Is Part Of: Applied materials today. Volume 26(2022)
• Publication Date: 2022-03
• Subjects: Chemical bath deposition -- AgBiS2 -- Silver bismuth sulfide -- Photodetectors -- X-ray; Materials science -- Periodicals; Materials -- Research -- Periodicals; 620.1105
• DOI: 10.1016/j.apmt.2021.101262
• Languages: English
• ISSNs: 2352-9407

Abstract

Highlights: High quality AgBiS2 thin films were prepared with a novel chemical bath deposition (CBD) technique. By tuning the annealing temperature, morphology, composition and crystallinity, uniform and large-area CBD grown AgBiS2 films were obtained. High-performance photodiodes were fabricated based on the CBD-grown AgBiS2 films, and we achieved state-of-the-art device performance, including high responsivity covering the whole range of visible and near-infrared (350 nm−1100 nm), fast response speed of < 1 s, and remarkable device stability, implying great potential for next-generation solution-processed photodetectors. Devices based on AgBiS2 have also demonstrated the potential for X-ray detection, which is the first report of AgBiS2 based X-ray detectors. Abstract: AgBiS2 possesses high absorption coefficient from ultra-violet to near-infrared, decent charge transport and superior materials stability, which has emerged as a promising candidate in the field of optoelectronics. However, efficient AgBiS2 -based devices are mostly based on AgBiS2 quantum dots and precursor methods, which require either long preparation time and complex synthetic steps or inert atmosphere protection. To address these issues, we developed a novel and facile chemical bath deposition approach to deposit highly crystallized, uniform AgBiS2 thin films with decent optoelectronic properties. We also fabricated AgBiS2 heterojunction photodetectors based on this method, and achieved high responsivity covering the whole range of visible and near-infrared, fast response speed of ∼960 ns, and high specific detectivity of 8 × 10 11 Jones and outstanding device stability. More importantly, we first demonstrated the device performance under X-ray illumination and observed decent sensitivity, implying great potential for low-cost, solution-processable X-ray detectors. Graphical abstract: Image, graphical abstract