Role of defects in electron band structure and gas sensor response of La2CuO4. Issue 6 (4th November 2020)
- Record Type:
- Journal Article
- Title:
- Role of defects in electron band structure and gas sensor response of La2CuO4. Issue 6 (4th November 2020)
- Main Title:
- Role of defects in electron band structure and gas sensor response of La2CuO4
- Authors:
- Roy, Chinmay
Ghosh, Aparna
Chatterjee, Suman - Abstract:
- Abstract : Purpose: This paper aims to estimate the relationship between defect structure with gas concentration for use as a gas sensor. The change in defect concentration caused a shift in the Fermi level, which in turn changed the surface potential, which is manifested as the potentiometric response of the sensing element. Design/methodology/approach: A new theoretical concept based on defect chemistry and band structure was used to explain the experimental gas response of a sensor. The theoretically simulated response was compared with experimental results. Findings: Understanding the origin of potentiometric response, through the generation of defects and a corresponding shift in Fermi level of sensing surface, by the adsorption of gas. Through this understanding, the design of a sensor with improved selectivity and stability to a gas can be achieved by the study of defect structure and subsequent band analysis. Research limitations/implications: This paper provides information about various types of surface defects and numerical simulation of material with defect structure. The Fermi energy of the simulated value is correlated with the potentiometric sensor response. Practical implications: Gas sensors are an integral part of vehicular and industrial pollution control. The theory developed shows the origin of response which can help in identifying the best sensing material and its optimum temperature of operation. Social implications: Low-cost, reliable and highlyAbstract : Purpose: This paper aims to estimate the relationship between defect structure with gas concentration for use as a gas sensor. The change in defect concentration caused a shift in the Fermi level, which in turn changed the surface potential, which is manifested as the potentiometric response of the sensing element. Design/methodology/approach: A new theoretical concept based on defect chemistry and band structure was used to explain the experimental gas response of a sensor. The theoretically simulated response was compared with experimental results. Findings: Understanding the origin of potentiometric response, through the generation of defects and a corresponding shift in Fermi level of sensing surface, by the adsorption of gas. Through this understanding, the design of a sensor with improved selectivity and stability to a gas can be achieved by the study of defect structure and subsequent band analysis. Research limitations/implications: This paper provides information about various types of surface defects and numerical simulation of material with defect structure. The Fermi energy of the simulated value is correlated with the potentiometric sensor response. Practical implications: Gas sensors are an integral part of vehicular and industrial pollution control. The theory developed shows the origin of response which can help in identifying the best sensing material and its optimum temperature of operation. Social implications: Low-cost, reliable and highly sensitive gas sensors are highly demanded which is fulfilled by potentiometric sensors. Originality/value: The operating principle of potentiometric sensors is analyzed through electron band structure analysis. With the change in measured gas concentration, the oxygen partial pressure changes. This results in a change in defect concentration in the sensing surface. Band structure analysis shows that change in defect concentration is associated with a shift in Fermi level. This is the origin of the potentiometric response. … (more)
- Is Part Of:
- Sensor review. Volume 40:Issue 6(2020)
- Journal:
- Sensor review
- Issue:
- Volume 40:Issue 6(2020)
- Issue Display:
- Volume 40, Issue 6 (2020)
- Year:
- 2020
- Volume:
- 40
- Issue:
- 6
- Issue Sort Value:
- 2020-0040-0006-0000
- Page Start:
- 675
- Page End:
- 685
- Publication Date:
- 2020-11-04
- Subjects:
- Defects behavior -- Oxygen vacancy -- Partial pressure -- Points defects -- Semiconductor sensor -- Sensor response
Sensor systems -- Periodicals
Detectors -- Industrial applications -- Periodicals
Engineering instruments -- Periodicals
681.2 - Journal URLs:
- http://www.emeraldinsight.com/journals.htm?issn=0260-2288 ↗
http://www.emeraldinsight.com/ ↗ - DOI:
- 10.1108/SR-12-2019-0319 ↗
- Languages:
- English
- ISSNs:
- 0260-2288
- Deposit Type:
- Legaldeposit
- View Content:
- Available online (eLD content is only available in our Reading Rooms) ↗
- Physical Locations:
- British Library DSC - 8241.782000
British Library DSC - BLDSS-3PM
British Library STI - ELD Digital store - Ingest File:
- 20830.xml