Gradient‐Structuring Manipulation in Ni3S2 Layer Boosts Solar Hydrogen Production of Si Photocathode in Alkaline Media. Issue 2 (7th December 2021)

• Record Type: Journal Article
• Authors: Chen, Cong; Wang, Yongjie; Nie, Chengming; Shen, Junxia; Wei, Zhihe; Zou, Shuai; Su, Xiaodong; Fan, Ronglei; Peng, Yang; Shen, Mingrong
• Is Part Of: Advanced energy materials. Volume 12:Issue 2(2022)
• Page Start: n/a
• Page End: n/a
• Publication Date: 2021-12-07
• Subjects: charge transfer -- gradient‐structuring -- Ni 3S 2 -- Si photocathodes -- solar hydrogen production; Energy harvesting -- Materials -- Periodicals; Energy conversion -- Materials -- Periodicals; Energy storage -- Materials -- Periodicals; Photovoltaics -- Periodicals; Fuel cells -- Periodicals; Thermoelectric materials -- Periodicals; 621.31
• DOI: 10.1002/aenm.202102865
• Languages: English
• ISSNs: 1614-6832

Abstract

Abstract: Using silicon as a photocathode has long been considered as an ideal pathway toward cost‐effective photoelectrochemical (PEC) solar hydrogen production. However, the trade‐off between charge transfer efficiency and stability severely restricts the practical application of Si‐based PEC devices in alkaline media. Herein, a facile thermo‐electrodeposition process to integrate a gradient‐structuring Ni3 S2 (G‐Ni3 S x O2− x ) layer to simultaneously protect and act as a catalyst in Si photocathodes in alkaline solutions is reported. The G‐Ni3 S x O2− x layer not only provides abundant active sites for the hydrogen evolution reaction but also promotes the charge separation and transport and mass transfer. Consequently, the as‐fabricated Si photocathodes exhibit an excellent PEC activity under simulated AM1.5G illumination with a high onset potential of 0.39 V versus reversible hydrogen electrode (RHE) and a photocurrent density of −33.8 mA cm −2 at 0 V versus RHE, outperforming the state‐of‐the‐art p‐Si based photocathodes. Moreover, the G‐Ni3 S x O2− x layer possesses a good interfacial contact with the Si substrate with negligible stress at the G‐Ni3 S x O2− x /Si interface, affording a good durability of over 120 h at >30 mA cm −2 in alkaline media. This gradient‐structuring strategy paves new way for engineering highly efficient and durable PEC devices. Abstract : Gradient‐structuring manipulation in a Ni3 S2 layer greatly boosts the photoelectrochemical activity and stability of a p‐Si photocathode, which can be attributed to the abundant active sites for the hydrogen evolution reaction, accelerated charge transfer at the catalyst/Si interface, promoted mass transfer at electrode surface, and negligible stress at catalyst/Si interface, outperforming the state‐of‐the‐art p‐Si based photocathodes.