Multifunctional Ion‐Sensitive Floating Gate Fin Field‐Effect Transistor with Three‐Dimensional Nanoseaweed Structure by Glancing Angle Deposition Technology. Issue 5 (25th November 2021)

• Record Type: Journal Article
• Authors: Shen, Ying‐Chun; Wang, Chien‐Ping; Liou, Kun‐Lin; Tan, Po‐Hung; Wang, Yi‐Chung; Wu, Shu‐Chi; Yang, Tzu‐Yi; Yu, Yi‐Jen; Chiang, Tsung‐Yu; Chih, Yue‐Der; Chang, Jonathan; Shih, Jiaw‐Ren; Lin, Chrong Jung; King, Ya‐Chin; Chueh, Yu‐Lun
• Is Part Of: Small. Volume 18:Issue 5(2022)
• Page Start: n/a
• Page End: n/a
• Publication Date: 2021-11-25
• Subjects: glancing angle deposition -- ion‐sensitive floating gate field‐effect transistors -- multiple ion detection -- nanoseaweed structures; Nanotechnology -- Periodicals; Nanoparticles -- Periodicals; Microtechnology -- Periodicals; 620.5
• DOI: 10.1002/smll.202104168
• Languages: English
• ISSNs: 1613-6810

Abstract

Abstract: A multifunctional ion‐sensitive floating gate Fin field‐effect transistor (ISFGFinFET) for hydrogen and sodium detection is demonstrated. The ISFGFinFET comprises a FGFET and a sensing film, both of which are used to detect and improve sensitivity. The sensitivity of the ISFGFinFET can be adjusted by modulating the coupling effect of the FG. A nanoseaweed structure is fabricated via glancing angle deposition (GLAD) technology to obtain a large sensing area to enhance the sensitivity for hydrogen ion detection. A sensitivity of 266 mV per pH can be obtained using a surface area of 3.28 mm 2 . In terms of sodium ion detection, a calix[4]arene sensing film to monitor sodium ions, obtaining a Na + sensitivity of 432.7 mV per pNa, is used. In addition, the ISFGFinFET demonstrates the functionality of multiple ions detection simultaneously. The sensor arrays composed of 3 × 3 pixels are demonstrated, each of which comprise of an FGFET sensor and a transistor. Furthermore, 16 × 16 arrays with a decoder and other peripheral circuits are constructed and simulated. The performance of the proposed ISFGFinFET is competitive with that of other state‐of‐the‐art ion sensors. Abstract : The necessity for high sensitivity for ion detection has been improved in recent years. In this work, to adjust and increase the sensitivity, a floating gate (FG) structure is introduced into the Fin field‐effect transistor (FinFET) device while the nanoseaweed Al2 O3 structure is fabricated for the ion reacting layer via glancing angle deposition. Furthermore, combining different materials, the ion‐sensitive FGFinFET can realize multiple ion detection.