Fano resonance photoemission study of Sm on Pb0.97Ge0.03Te crystal. (October 2020)

• Record Type: Journal Article
• Authors: Orlowski, B.A.; Guziewicz, E.; Reszka, A.; Pietrzyk, M.A.; Kowalski, B.J.; Johnson, R.L.
• Is Part Of: Radiation physics and chemistry. Volume 175(2020:Oct.)
• Publication Date: 2020-10
• Subjects: Radiation chemistry -- Periodicals; Radiometry -- Periodicals; Radiation -- Periodicals; Chimie sous rayonnement -- Périodiques; 539.2
• DOI: 10.1016/j.radphyschem.2018.11.034
• Languages: English
• ISSNs: 0969-806X

Abstract

Abstract: The Fano resonance photoemission study of the Pb0.97 Ge0.03 Te crystal doped by sequential deposition of Sm atoms on the clean [111] surface was performed to determine the contribution of the Sm4f electrons to the valence band of the Pb0.97 Ge0.03 Te/Sm crystal and to monitor the process of introduction of Sm into the substrate crystal host lattice. After each deposition step and after subsequent thermal treatment the contribution of both Sm 2+ and Sm 3+ ions were assessed. The analysis of the acquired data and a comparison with the results of similar studies of Sm doped CdTe, ZnO and GaN show that the thermal treatment at 250 °C of the Sm/Pb0.97 Ge0.03 Te system leads to conversion of Sm 2+ to Sm 3+ and probably to Sm 4+ which corresponds to the valence of the cations in the substrate crystal host lattice. Highlights: Study of Semiconductors with impurities of high localized orbitals 3d and 4f. Fano Resonance Photoemission used for study with high matrix element of optical transition of Sm 4d-4f. High sensitivity to detect concentration and valence due to application of Synchrotron Radiation.