Mesoscopic TiO2/Nb2O5 Electron Transfer Layer for Efficient and Stable Perovskite Solar Cells. Issue 10 (23rd March 2021)

• Record Type: Journal Article
• Authors: Chavan, Rohit D.; Parikh, Nishi; Tavakoli, Mohammad Mahdi; Prochowicz, Daniel; Kalam, Abul; Yadav, Pankaj; Bhoite, Pravin H.; Hong, Chang Kook
• Is Part Of: Advanced materials interfaces. Volume 8:Issue 10(2021)
• Page Start: n/a
• Page End: n/a
• Publication Date: 2021-03-23
• Subjects: atomic layer deposition -- hysteresis -- interfacial recombination -- perovskite solar cells -- stability; Materials science -- Periodicals; 620.11
• DOI: 10.1002/admi.202100177
• Languages: English
• ISSNs: 2196-7350

Abstract

Abstract: There has been tremendous advancement in the field of perovskite photovoltaics by means of interfacial engineering, compositional engineering and optimization of charge collection efficiency. The large bandgap oxides deposited using atomic layer deposition (ALD) technique have proven to be successfully passivating the interfacial defects owing to the advantages offered by this technique. Here, the effect of surface modification of mesoporous TiO2 (ms‐TiO2 ) layer with a transition metal oxide named niobium pentoxide (Nb2 O5 ) deposited by ALD technique on the performance and stability of perovskite solar cells (PSCs) is investigated. The results reveal that functionalization with ultrathin Nb2 O5 layer improve the optoelectronic properties and morphology of the deposited perovskite films. Moreover, the charge transfer is improved and hence the interfacial recombination is reduced. This results in improved power conversion efficiency (PCE) from 19.11% to 21.04% and open‐circuit voltage ( V OC ) from 1.118 to 1.147 V for the modified champion device. Additionally, the device shows negligible hysteresis with enhanced shelf life thermal and UV stabilities. Abstract : This article reports the interfacial modification of mesoporous TiO2 electron transport layer with ultrathin Nb2 O5 using atomic layer deposition technique. This interlayer facilitates charge transfer and reduces charge carrier recombination pathways at interfaces. In addition, the performance and stability after prolong exposure to high humidity, temperature, and UV irradiation of the Nb2 O5 ‐modified devices are improved.