Energetic Sulfide Vapor‐Processed Colloidal InAs Quantum Dot Solids for Efficient Charge Transport and Photoconduction. Issue 2 (21st December 2021)

• Record Type: Journal Article
• Authors: Koh, Weon-kyu; Choi, Soo Ho; Kim, Youngsik; Kim, Hyojung; Kim, Ki Kang; Jeong, Sohee
• Is Part Of: Advanced photonics research. Volume 3:Issue 2(2022)
• Page Start: n/a
• Page End: n/a
• Publication Date: 2021-12-21
• Subjects: colloidal quantum dots -- field-effect transistors -- indium arsenide -- photoconduction -- vapor processes; Photonics -- Periodicals; 621.36505
• DOI: 10.1002/adpr.202100243
• Languages: English
• ISSNs: 2699-9293

Abstract

Abstract : The energetic sulfide vapor process on colloidal indium arsenide (InAs) quantum dots (QDs) for integrated optoelectronic devices is demonstrated. X‐ray photoemission spectroscopy supports the presence of sulfur on QD surface, which increases the air stability, and ultraviolet photoemission spectroscopy and field‐effect transistor analysis confirm n‐type charge transport of corresponding QD films with higher electron mobilities. Photoconductivity of the same devices in near‐infrared wavelength shows gate bias‐dependent recombination of photogenerated carriers, coming from charge accumulation and depletion transition of QD channels. The synergetic approach of the vapor process on colloidal QD solids opens a promising opportunity for scalable and complementary metal‐oxide semiconductor‐compatible optoelectronic devices. Abstract : The energetic sulfide vapor process on colloidal indium arsenide quantum dots for integrated optoelectronic devices is demonstrated. Field‐effect transistor measurements in the dark show robust n‐type charge transport with enhanced electron mobilities and largely enhanced photocurrent in the near‐infrared region under illumination.