Cite
HARVARD Citation
Susilo, R. et al. (2022). A tunable band gap of the layered semiconductor Zn3In2S6 under pressure. Journal of materials chemistry. 10 (5), pp. 1825-1832. [Online].
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Susilo, R. et al. (2022). A tunable band gap of the layered semiconductor Zn3In2S6 under pressure. Journal of materials chemistry. 10 (5), pp. 1825-1832. [Online].