Attractive electron mobility in (113) n-type phosphorus-doped homoepitaxial diamond. (30th April 2021)

• Record Type: Journal Article
• Authors: Pinault-Thaury, Marie-Amandine; Stenger, Ingrid; Gillet, Rémi; Temgoua, Solange; Chikoidze, Ekaterina; Dumont, Yves; Jomard, François; Kociniewski, Thierry; Barjon, Julien
• Is Part Of: Carbon. Volume 175(2021)
• Page Start: 254
• Page End: 258
• Publication Date: 2021-04-30
• Subjects: Carbon -- Periodicals; Carbone -- Périodiques; Koolstof; Toepassingen; Electronic journals; 546.681
• DOI: 10.1016/j.carbon.2021.01.011
• Languages: English
• ISSNs: 0008-6223

Abstract

Abstracts: A (113) diamond homoepilayer doped with phosphorus is grown. It presents high crystalline quality and n-type conductivity with a maximum electron mobility of 355 cm 2 /V.s at 450K. Its electrical properties are compared to those measured on conventionally oriented (100) and (111) homoepilayers synthetized in the same reactor with similar phosphorus content (∼1–2x10 18 at/cm 3 ). The (113) layer presents higher electron mobility than the (100) film, despite a comparable compensation ratio. Besides, above 450 K the (113) electron mobility is also higher than the one of the low compensated (111) sample. This shows the attractive character of the (113) diamond orientation for n-type doping. Graphical abstract: Image 1