Development of P-on-N silicon photomultiplier prototype for blue light detection. (6th November 2017)

• Record Type: Journal Article
• Authors: Lim, K.T.; Lee, D.; Park, K.; Kim, G.; Lee, M.; Kim, Y.; Kim, M.; Kim, J.; Kim, H.; Lee, E.; Sul, W.S.; Cho, G.
• Is Part Of: Journal of instrumentation. Volume 12:Number 11(2017:Nov.)
• Page Start: C11006
• Page End: C11006
• Publication Date: 2017-11-06
• Subjects: Photon detectors for UV, visible and IR photons (solid-state) (PIN diodes, APDs, Si-PMTs, G-APDs, CCDs, EBCCDs, EMCCDs etc) -- Gamma camera, SPECT, PET PET/CT, coronary CT angiography (CTA) -- Solid state detectors; Scientific apparatus and instruments -- Periodicals; 502.84
• DOI: 10.1088/1748-0221/12/11/C11006
• Languages: English
• ISSNs: 1748-0221

Abstract

Abstract: In this paper, we report a preliminary study on the electrical and optical properties of the first P-on-N SiPM prototype developed at KAIST with a collaboration of NNFC. The sensors were fabricated on a 200 mm n-type silicon epitaxial-layer wafer via customized CMOS process at NNFC. Measurements on the reverse current were carried out on a wafer-level with an auto-probing station and breakdown voltage was found as 32.3 V. As for optical characterization, gain, dark count rate, and photon detection efficiency have been measured as a function of bias voltage at room temperature. In particular, we show that the device had a comparable gain of ∼ 10 6 with respect to conventional PMTs and had a peak sensitivity in blue light regime. Furthermore, we attempt to explain possible causes of some of phenomena seen from the device characterization.