Design of Materials Configuration for Optimizing Redox‐Based Resistive Switching Memories. Issue 3 (21st November 2021)

• Record Type: Journal Article
• Authors: Chen, Shaochuan; Valov, Ilia
• Is Part Of: Advanced materials. Volume 34:Issue 3(2022)
• Page Start: n/a
• Page End: n/a
• Publication Date: 2021-11-21
• Subjects: capping layers -- electrode materials -- redox reactions -- resistive switching -- thicknesses; Materials -- Periodicals; Chemical vapor deposition -- Periodicals; 620.11
• DOI: 10.1002/adma.202105022
• Languages: English
• ISSNs: 0935-9648

Abstract

Abstract: Redox‐based resistive random access memories (ReRAMs) are based on electrochemical processes of oxidation and reduction within the devices. The selection of materials and material combinations strongly influence the related nanoscale processes, playing a crucial role in resistive switching properties and functionalities. To date, however, comprehensive studies on device design accounting for a combination of factors such as electrodes, electrolytes, and capping layer materials related to their thicknesses and interactions are scarce. In this work, the impact of materials' configuration on interfacial redox reactions in HfO2 ‐based electrochemical metallization memory (ECM) and valence‐change memory (VCM) systems is reported. The redox processes are studied by cyclic voltammetry, and the corresponding resistive switching characteristics are investigated. In ECM cells, the overall cell resistance depends on the electrocatalytic activity of the counter electrode. Nonetheless, the capping layer material further influences the cell resistance and the SET and RESET voltages. In VCM systems, the influence of the electrode material configuration is also pronounced, and is capable of modulating the active resistive switching interface. For both types of memory cells, the switching behavior changes significantly with variation of the oxide thickness. The results present important materials selection criteria for rationale design of ReRAM cells for various memristive applications. Abstract : Influence of electrode and capping layer materials configuration in HfO2 ‐based electrochemical metallization memory (ECM) and valence‐change memory (VCM) types of redox‐based resistive random access memory (ReRAM) cells is presented. Cyclic voltammetry reveals different interfacial electrochemical redox processes. The modulation of the resistive switching characteristics by varying the capping layer material in a combination with counter(bottom) electrode configurations are demonstrated and highlighted.