Cite
HARVARD Citation
Lin, S. et al. (2022). A B2N monolayer: a direct band gap semiconductor with high and highly anisotropic carrier mobility. Nanoscale. 14 (3), pp. 930-938. [Online].
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Lin, S. et al. (2022). A B2N monolayer: a direct band gap semiconductor with high and highly anisotropic carrier mobility. Nanoscale. 14 (3), pp. 930-938. [Online].